*High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
*High Efficiency: 65%typ.
*Integrated gate protection diode
1
2
1.5+/-0.1
3
1.5+/-0.1
0.4 +0.03 -0.
This device have an interal monolithic zener diode from gate to source for ESD protection.
TYPE NAME
0.8 MIN 2.5+/-0.1.
Silicon MOSFET Power Transistor 520MHz,1W
OUTLINE DRAWING
1.5+/-0.1
RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device have an interal monolithic zener diode from gate to source for ESD p.
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